Nanometer Aluminum Nitride powder developed successfully

Nanometer Aluminum Nitride Powder Research and Development Hefei Kaier Nanotechnology Development Co., Ltd. recently took the lead in the world to develop nano-sized aluminum nitride powder products. This new achievement will promote a number of technological upgrades in China's material sector and provide material security for high-tech and general industrial fields such as aerospace, military, and electronic information. At present, the product has achieved production capacity of 5 kilograms per hour and can achieve continuous production. According to reports, in addition to the general characteristics of nano-sized powder materials, the product also has excellent dielectric properties, low thermal expansion coefficient, and good chemical stability. The development of this product has successfully solved the traditional contradiction between insulation performance and thermal conductivity in the material field, in particular, it has both good insulation performance and good thermal conductivity, and can solve many problems in the practical application of materials. At the same time, the plasma arc gas-phase synthesis method has a large output and low cost, and the price is 1/5 to 1/4 of that of foreign countries, and the market is highly competitive. Nanometer aluminum nitride ceramic powder materials are mainly used for manufacturing high-performance structural devices such as aerospace and military devices such as optical devices and electronic devices. Nano-aluminum nitride ceramic powder materials can be added to industrial ceramics, metals, and graphite products. Obtaining ideal application performance, using nano-ceramic powder material to modify some of the polymer materials, can make the material meet the different needs of civilian products, such as household appliances products, ceramic products and so on. In the increasingly fierce competition in the high-tech field, technology continues to improve today, the product has a good market prospects.